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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1019
DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER

Collector-base voltage
INCH
Base current
Collector -emitter voltage
Emitter-base voltage
ANG
EMIC ES
Open emitter Open base Open collector
CONDITIONS
OND
TOR UC
VALUE -70 -50 -5 -7 -1
UNIT V V V A A
Collector current
Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
2 W 30 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; IB=0 IC=-4A ;IB=-0.4A IC=-4A ;IB=-0.4A VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 MIN -50
2SB1019
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
TYP.
MAX
UNIT V
-0.2 -0.9
-0.4 -1.2 -30 -50 240 |I |I
V V A A
Output capacitance

Switching times ton ts tf Turn-on time Storage time Fall time
HAN INC
Y 120-240
SEM GE
OND IC
TOR UC
250 0.2 2.5 0.5
10
MHz pF
|I |I |I
s s s
RL=10| IB1=-IB2=-0.3A VCC=-30V
hFE-1 Classifications O 70-140
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1019
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.15 mm)
3


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